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TOF-SIMS (Time-of-Flight SIMS) achieves a perfect balance between sensitivity and resolution, allowing for excellent composition analysis. Its performance in terms of both spatial resolution and depth resolution are exceptional, and it has a wide range of uses in the research and development of a variety of advanced manufacturing processes. All of this makes it a great microanalysis tool. |
 Time-of-Flight SIMS |
There are many kinds of composition analysis tools. Some, such as ICP-MS and Magnetic SIMS, emphasize detection sensitivity. Others, like TEM’s EDS and EELS, focus on resolution. It must be understood that no single composition analysis tool can do everything. We need to take sensitivity and resolution into account at the same time, and we must analyze any chemical or organic residues. In many cases, we need to rely on the coordination of and cooperation between a variety of instruments in order to complete the qualitative and quantitative analysis of unknown materials (Figure 2). |
The situation is different now. All parties are looking forward. Here is the good news for the field of composition analysis—TOF-SIMS has finally arrived. The system qualification has been completed, and it is officially open for business!
Figure 2 Distribution Diagrams for the Sensitivity and Resolution of Various Composition Analysis Tools |
Is TOF-SIMS really that amazing? Let’s take a look!
You can see in Figure 2 that TOF-SIMS was able to achieve a good balance between sensitivity and resolution.
First of all, the spatial resolution can be as small as 50nm. Magnetic SIMS, which can reach 50um, cannot even compare. Couple that with the ability to analyze trace amounts of organic and inorganic substances and contamination, and ToF-SIMS becomes a powerful tool for microanalysis. It can be widely used in the research and development of advanced materials, processes, packaging and biomedical research.
- Analysis of Organic Contamination（spectrum）
Figure 3 TOF-SIMS possesses the ability to analyze organic contaminants in micro areas. Through comparisons with the existing database, it can then help identify the source of organic contaminants. |
In terms of depth resolution, it can operate at the Angstrom (A) level. Whether in advanced low-energy ion implantation processes, super thin films, or epitaxial structure, it has demonstrated excellent analytical capabilities.
 Figure 4 Ultra-shallow Junction Concentration-Depth Analysis： Analyze the concentration and distribution within 100nm |
Figure 5 SION, with a mere 8nm surface layer, can be detected |
Combining spatial resolution and depth resolution capabilities, ToF-SIMS is able to generate three-dimensional composition analysis diagrams. These provide a more intuitive perspective on the spatial distribution of analyzed materials.
- VSCEL Epitaxy Composition Distribution
Figure 6 VCSEL Epitaxy Composition Analysis: In addition to in-depth 2D analysis, we have also constructed a 3D stereogram |
As for sensitivity, it maintains ppm level detection, making up for the lack of microanalysis in XPS and FTIR. Of course, detection limits are suitable for general depth profile analysis.
In addition to the aforementioned features, traditional analytical capabilities, including the analysis of all elements, insulation material analysis, composition imaging (FFT), etc., must be maintained in order to meet the varying needs for ToF-SIMS in different fields.
Figure 7 Detect the sodium (Na) content in SiO2 |
Figure 8 The distribution map of different elements |
Finally, in addition to the stunning capabilities of ToF-SIMS, don’t forget the swift services provided by MA-Tek, the first analytical testing lab in Taiwan to provide ToF-SIMS services. In the future, customers in the Asia-Pacific will no longer have to endure long waiting times to get their data. MA-Tek can be listed among the top composition analysis providers!
