PEM-CCD
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Technical Concept |
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Emission microscopy（EMMI）, also called photon emission microscopy（PEM）can be used to detect high emission photons (called hot spots) to reflect a corresponding failure location. |
Emission microscopy (EMMI), also called photon emission microscopy (PEM), has been widely employed to identify the failure positions of devices. It uses a cold-charge-coupled device (C-CCD) to detect photons with wavelengths between 400 and 1100 nm. Such photons emitting from a semiconductor device are usually donated by electron-photon recombination and thus EMMI is good to detect related failures, such as latch-up.
An area with high emission photons (called hot spots) detected by EMMI reflects a corresponding failure location. Fail isolation is an important step for further failure analysis and therefore EMMI is indispensable in the development of semiconductor devices.
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Equipment |
HAMAMATSU PHEMOS-1000 |
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Applications |
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Failures leading to electron-photon recombination |
- P-N Junction leakage
- Transistor failure caused by an open or short circuit
- Lat-chup
- Gate oxide leakage
- Poly-Si filament
- Substrate damage
- device burns out
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Artifacts (Normal device emits photons) |
- Floating gates
- Saturated bipolar transistors or analog MOSFETs
- Forward biased diode
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Emission undetectable |
- Emission locations that are blocked
a．Buried junctions
b．Leakage locations under a large area of metal lines
- Ohmic shorts
- Shorted metal interconnects (EMMI could detect such situations in some specific cases.)
- Surface conductive paths
- Silicon conduction paths
- Small leakage current (<0.1 uA)
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Contact |
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