PEM-InGaAs
|
Technical Concept |
|
InGaAs, short for InGaAs EMMI, are similar to traditional EMMI but longer wavelength range, between 900 and 1700 nm (infrared), and better sensitivity. |
 |
|
With continuous decreasing operation voltage, the wavelength of emission photons caused by electron-hole combination has shifted to infrared range. Therefore, InGaAs are better at detecting hot spots in ICs operated at a lower voltage. In addition, the sensitivity of InGaAs is much better than that of traditional EMMI. This makes InGaAs an important FA tool for modern fault isolation.
|
Equipment |
HAMAMATSU PHEMOS-1000 |
|
Applications |
The application is similar to Si-CCD-based EMMI but InGaAs hold the following advantages.
- More powerful for IC inspection with a lower operation voltage
- High quantum yield in the IR range
- More powerful for backside inspection because of the higher IR transmission rate for Si substrate
- In-situ inspection of hot spots, is much more efficient than Si-CCD-based EMMI
 |
 |
|
Contact |
|||||||||||
|
|
|
|
|||||||||||
|
|
|
|
|||||||||||
|
|