We use cookies to improve your experience. By your continued use of this site you accept such use. To change your settings please see our Privacy Policy.
Close

Non-destructive Analysis (NDA)

Circuit Edit (CKT)

Materials Analysis (MA)

Application Forms

Software

MA-tek FTP

Sustainability report

XPS / ESCA

Technical Concept

An X-ray Photoelectron Spectroscopy (XPS) or Electron Spectroscopy of Chemical Analysis (ESCA) is designed to excite and then detect photoelectrons emitted from the inner shell of material surfaces and analysis the energy.

A sample irradiated with x-rays induces emitting of photoelectrons from the inner shell of material surfaces, based on the photoelectric effect. An XPS or ESCA is designed to excite and then detect such photoelectrons whose energy is analyzed to reflect samples' binding energy or chemical state.

 

 

 

Application

1.Surface contamination / Abnormality analysis

XPS is a surface analytical technique to measure the material composition of elements and chemical states in the surface range between 1 and 10nm. Thus, it explores surface abnormality, such as contamination, discoloration, defection, and metal corrosion.

 

 

2.Thin film composition and depth analysis

XPS can be used to detect the composition of thin films. By combining argon ion source sputtering, it is able to produce high quality depth profiles with excellent resolution.

 

 

3.The determination of the oxide thickness and oxidation degree for metal surfaces

XPS/ESICA can provide the composition of metal alloy and surface oxide and thus reflects surface oxidation degree. In addition, the surface oxide thickness of samples can be determined either by non-destructive (film thickness is less than 10nm) or destructive depth profiling.

 

 

4.Work function analysis of metal materials

XPS/ESCA measurement can be used to detect the work function of metal materials.

 

 

 

Equipment


XPS/ESCA (Thermo K-alpha, K-alpha+)


XPS/ESCA (ESCALAB Xi+)

 

〔ESCALAB Xi+〕Applications and Strengths

  1. The lateral resolution can reach 5um.
  2. Parallel image capability helps specific location analysis.
  3. Cluster ion sources reduce the damage during ion bombardment.
  4. Spectrum mapping help to identify unknown elements and locations.
  5. Energy band gap and band structure analysis
  6. H content analysis
  7. Isotope analysis

 

 

(a) Parallel Image

 (b) Spectrum for Interested Area

 

 (c) Cluster-cleaned Prevent Ta Reduction

 (d) Depth profile by using MAGCIS

 

 

 

Application

(a) Adhesion failure issue

 (b) Identification of photo resist residue

 

 (c) Surface contamination

 (d) Depth profiling

 

 (e) Work function

 

 

 

Contact

Taiwang Lab

Ms. Chen

: +886-3-6116678 ext:3960

: +886-952-303-810

xps@ma-tek.com

Shanghai Lab

Mr. Yang

: +86-21-5079-3616 ext:7201

: 137-6486-2001

: xps_sh@ma-tek.com