OBIRCH
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Technical Concept |
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The Infrared Optical Beam Induced Resistance Change（IR OBIRCH）, is a failure analysis tool used to detect IR illumination induced resistance changes. |
It uses an IR laser with a wavelength of 1340 nm to systematically scan a voltage-added IC device. The just-scanned area absorbs illuminated photons to change its resistance and thus alter its sensing current. In general, the resistance variation at a failure position is different than that for a normal area, which leads to distinct sensing currents. Thus, a position with current variation that is clearly different from other areas is probable of a failure point and is called a hot spot.
Such measurement could increase its sensitivity by adding a lock-in function. Furthermore, this technology can be used for backside measurement. Nowadays IR-OBIRCH is an indispensable important FA technology applied in IC development.
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Equipment |
HAMAMATSU uAMOS-200 |
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Applications |
- IDDQ failure analysis(Idd quiescent current)
- Inspection of defect in the metal line (void, Si nodule)
- Inspection of abnormal resistances at contact holes (such as improper via contact)
- Inspection of metal or poly bridging.
- Burnout detection for circuits or elements
- Gate oxide leakage detection
- Failure analysis for ESD/Latch-up
- P-N junction leakage or breakdown
- Monitoring active elements [devices], such as transistors and diodes
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Contact |
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