DB P-FIB
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Technical Concept |
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Dual Beam Plasma FIB（P-FIB）uses Xenon as an ion source for cross-section sample preparation. |
The operation time is 20 times faster than conventional Ga+ FIB. Hence, it is suitable for larger area cross-sectioning at specified target, which cannot be achieved with a standard FIB in a reasonable time.
Besides, electron gun is also installed in P-FIB to form SEM images. During cross-sectioning, defect profile can be inspected progressively and gradually in SEM mode such that analysts can decide the proper cutting location.
In addition to structure observation, P-FIB is often used for defect investigation after thermal emission microscopy and non-destructive analysis, like OM, 3D x-ray, or SAT. Now P-FIB is widely implemented in IC and package failure analysis.
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Equipment |
MA-tek owns both FEI and TESCAN P-FIB. The features are listed as below：
- Beam current 1.5pA~1.3uA
- Landing Voltage – 2KV ~ 30KV
- Ion beam resolution at coincident point, <25nm @ 30 kV using preferred statistical method
- High-throughput large-area automation
- The cutting area can reach 500um wide and 500um deep
- Extremely fast and precise cross sectioning and material removal
(a) FEI P-FIB (b) TESCAN P-FIB |
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Applications |
P-FIB is mainly used in below products or structures：
- 5D/3D ICs
- TSV
- C4 bump/interposer/u-bump
- Bond PAD/1st Bond/2nd Bond
- Solder bump/BGA ball
- Chip backside
- MEMS
- Assembly/PCB
 Bond pad and wire inspection |
 Solder bump inspection by channel contrast |
 Profile checking under BGA ball in CSP |
 TSV inspection |
C4 bump cross-section |
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TESCAN P-FIB Special Features |
 EBIC can identify the fail location. Blue dots are particles or defects. (a) EBIC (b)SE |
 CL detector can distinguish the distribution and location of different materials. (a) CL (b)SE |
 BSE detector has stronger contrast between materials |
 LVSTD works at pressure of 1-500 Pa can be used to observe bio-samples (together with cooling stage) |
 Cooling stage：temperature can be stabilized at a range between -50 to -70 °C . With the cooling stage, we can observe the crystallization process. |
 SI detector can enhance the image contrast. |
 The rocking stage can automatically rotate the sample stage to eliminate marks by FIB. |
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Contact |
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