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EBIC / EBAC

EBIC (Electron Beam Induced Current)

EBIC is a method for imaging and characterization of p-n junctions, junction defects, and diffusion length.  

When an electron beam strikes a semiconductor, electro-hole pairs are generated and separated in the depletion region due to the built-in electric field, and a current flow can be measured. 

 

 

 

 

   

EBAC (Electron Beam Absorbed Current)

EBAC offers a quick and effective method to identify interconnect opens and shorts. 

EBAC utilizes the electron beam to penetrate the dielectric layers and inject charges inside the sample. The absorbed charges by the lower level metallization layer (3 or 4 layers deep) are measured by the current amplification through the probing probe.

 

 

  

 

Contact

Taiwan Lab

Mr. Zou

: +886-3-6116678 ext:3917

: +886- - - - - - -

jb_pfib@ma-tek.com

Shanghai Lab

Nanoprobe team

: +86-21-5079-3616 ext:7058

: 139-1757-1492

: nanoprobe_sh@ma-tek.com